VISHAY · FETs & Power MOSFETs · MPN SIR4604LDP-T1-GE3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 13nC@10V |
| Current - Continuous Drain(Id) | 51A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 3.9W |
| RDS(on) | 8.9mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.18nF |
60V 51A 1V 3.9W 8.9mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS