VISHAY · FETs & Power MOSFETs · MPN SIR4409DP-T1-RE3
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| Gate Charge(Qg) | 38.1nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 345pF |
| Current - Continuous Drain(Id) | 60.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 59.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF |
| RDS(on) | 7.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.67nF |
| Type | P-Channel |
40V 60.6A 2.3V 59.5W 7.5mΩ@10V 1 P-Channel P-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS