VISHAY · FETs & Power MOSFETs · MPN SIR438DP-T1-GE3
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| Drain to Source Voltage | 25V |
|---|---|
| Gate Charge(Qg) | 32.6nC@10V |
| Output Capacitance(Coss) | 1.14nF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 445pF |
| RDS(on) | 2.3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.56nF |
| Type | N-Channel |
25V 60A 2.3V 125W 2.3mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS