VISHAY SIR426DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR426DP-T1-GE3

No reviews yet — be the first to review VISHAY SIR426DP-T1-GE3.

Specifications

Gate Charge(Qg)9.3nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation26.7W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)10.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.16nF

Technical details

N-Channel 40V 30A 26.7W Surface Mount PowerPAK-SO-8

Related FETs & Power MOSFETs