VISHAY · FETs & Power MOSFETs · MPN SIR424DP-T1-GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 35nC@10V |
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 410pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 41.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 175pF |
| RDS(on) | 7.4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.25nF |
20V 30A 2.5V 41.7W 7.4mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS