VISHAY · FETs & Power MOSFETs · MPN SIR418DP-T1-GE3
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| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 371pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 39W |
| Reverse Transfer Capacitance (Crss@Vds) | 141pF |
| RDS(on) | 6mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.41nF |
| Type | N-Channel |
40V 40A 2.4V 39W 6mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS