VISHAY SIR414DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR414DP-T1-GE3

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)117nC@10V
Output Capacitance(Coss)610pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)275pF
RDS(on)3.2mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.75nF
TypeN-Channel

Technical details

N-Channel 40V 50A 83W Surface Mount PowerPAKSO-8

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