VISHAY · FETs & Power MOSFETs · MPN SIR188LDP-T1-RE3
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| Gate Charge(Qg) | 52nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 93.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 65.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 34.6pF |
| RDS(on) | 5.2mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.3nF |
| Type | N-Channel |
60V 93.6A 2.5V 65.7W 5.2mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS