VISHAY SIR188DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR188DP-T1-RE3

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)530pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation65.7W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)4.9mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)1.92nF
TypeN-Channel

Technical details

N-Channel 60V 60A 65.7W Surface Mount PowerPAKSO-8

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