VISHAY SIR186LDP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR186LDP-T1-RE3

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)48nC@10V
Current - Continuous Drain(Id)80.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)6.3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.98nF
TypeN-Channel

Technical details

N-Channel 60V 80.3A 57W Surface Mount PowerPAKSO-8

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