VISHAY SIR186DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR186DP-T1-RE3

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Specifications

Gate Charge(Qg)37nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation5W
RDS(on)7.8mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)1.71nF
TypeN-Channel

Technical details

N-Channel 60V 60A 5W Surface Mount PowerPAKSO-8

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