VISHAY · FETs & Power MOSFETs · MPN SIR186DP-T1-RE3
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| Gate Charge(Qg) | 37nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 5W |
| RDS(on) | 7.8mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.71nF |
| Type | N-Channel |
N-Channel 60V 60A 5W Surface Mount PowerPAKSO-8