VISHAY · FETs & Power MOSFETs · MPN SIR182LDP-T1-RE3
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| Gate Charge(Qg) | 26nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 775pF |
| Current - Continuous Drain(Id) | 130A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 80W |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF |
| RDS(on) | 3.85mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.7nF |
| Type | N-Channel |
60V 130A 2.4V 80W 3.85mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS