VISHAY · FETs & Power MOSFETs · MPN SIR182DP-T1-RE3
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| Gate Charge(Qg) | 33.8nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 840pF |
| Current - Continuous Drain(Id) | 117A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 69.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 2.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.25nF |
| Type | N-Channel |
N-Channel 60V 117A 69.4W Surface Mount PowerPAKSO-8