VISHAY SIR180DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR180DP-T1-RE3

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)44nC@10V
Output Capacitance(Coss)1.04nF
Current - Continuous Drain(Id)32.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation53.3W
Reverse Transfer Capacitance (Crss@Vds)58pF
RDS(on)1.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.03nF
TypeN-Channel

Technical details

N-Channel 60V 32.4A 53.3W Surface Mount PowerPAKSO-8

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