VISHAY · FETs & Power MOSFETs · MPN SIR180ADP-T1-RE3
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| Gate Charge(Qg) | 70nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 83.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 46.2pF |
| RDS(on) | 2.8mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.28nF |
| Type | N-Channel |
60V 35A 3.6V 83.3W 2.8mΩ@7.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS