VISHAY · FETs & Power MOSFETs · MPN SIR178DP-T1-RE3
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 95nC@10V |
| Current - Continuous Drain(Id) | 430A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 6.3W |
| RDS(on) | 0.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.43nF |
20V 430A 1.5V 6.3W 0.4mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS