VISHAY SIR178DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR178DP-T1-RE3

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)95nC@10V
Current - Continuous Drain(Id)430A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation6.3W
RDS(on)0.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)12.43nF

Technical details

20V 430A 1.5V 6.3W 0.4mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS

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