VISHAY SIR172ADP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR172ADP-T1-GE3

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Specifications

Gate Charge(Qg)12.8nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)16.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation3.9W
Reverse Transfer Capacitance (Crss@Vds)142pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.515nF

Technical details

N-Channel 30V 16.1A 3.9W Surface Mount PowerPAKSO-8

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