VISHAY · FETs & Power MOSFETs · MPN SIR172ADP-T1-GE3
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| Gate Charge(Qg) | 12.8nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 16.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 3.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 142pF |
| RDS(on) | 8.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.515nF |
N-Channel 30V 16.1A 3.9W Surface Mount PowerPAKSO-8