VISHAY SIR170DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR170DP-T1-RE3

No reviews yet — be the first to review VISHAY SIR170DP-T1-RE3.

Specifications

Gate Charge(Qg)42nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)383pF
Current - Continuous Drain(Id)95A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation104W
RDS(on)4.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)93pF
Number1 N-channel
Input Capacitance(Ciss)6.195nF
TypeN-Channel

Technical details

N-Channel 100V 95A 104W Surface Mount PowerPAKSO-8

Related FETs & Power MOSFETs