VISHAY · FETs & Power MOSFETs · MPN SIR167DP-T1-GE3
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| Gate Charge(Qg) | 36nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 23.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 65.8W |
| RDS(on) | 5.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 460pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.38nF |
P-Channel 30V 23.8A 65.8W Surface Mount PowerPAKSO-8