VISHAY SIR164DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR164DP-T1-GE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)40.6nC@10V
Output Capacitance(Coss)740pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation5.2W
Reverse Transfer Capacitance (Crss@Vds)460pF
RDS(on)2.05mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.95nF
Vgs±20V

Technical details

N-Channel 30V 50A 5.2W Surface Mount PowerPAKSO-8

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