VISHAY SIR158DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR158DP-T1-GE3

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Specifications

Gate Charge(Qg)130nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)915pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)495pF
RDS(on)2.3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.98nF
TypeN-Channel

Technical details

N-Channel 30V 60A 125W Surface Mount PowerPAK-SO-8

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