VISHAY · FETs & Power MOSFETs · MPN SIR150DP-T1-RE3
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| Gate Charge(Qg) | 21.4nC@10V |
|---|---|
| Drain to Source Voltage | 45V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 5.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF |
| RDS(on) | 2.71mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4nF |
N-Channel 45V 110A 5.2W Surface Mount PowerPAKSO-8