VISHAY SIR140DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR140DP-T1-RE3

No reviews yet — be the first to review VISHAY SIR140DP-T1-RE3.

Specifications

Drain to Source Voltage25V
Gate Charge(Qg)52.8nC@4.5V
Output Capacitance(Coss)4.31nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)510pF
RDS(on)0.9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)8.15nF
TypeN-Channel

Technical details

25V 100A 2.1V 104W 0.9mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs