VISHAY · FETs & Power MOSFETs · MPN SIR1309DP-T1-GE3
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| Gate Charge(Qg) | 28nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 65.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 4.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 375pF |
| RDS(on) | 7.3mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.25nF |
P-Channel 30V 65.7A 4.8W Surface Mount PowerPAKSO-8