VISHAY SIR124DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR124DP-T1-RE3

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)56.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation62.5W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)10.3mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)1.666nF
TypeN-Channel

Technical details

80V 56.8A 3.8V 62.5W 10.3mΩ@7.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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