VISHAY SIR122DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR122DP-T1-RE3

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)240pF
Current - Continuous Drain(Id)59.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation65.7W
Reverse Transfer Capacitance (Crss@Vds)12.5pF
RDS(on)9mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)1.95nF
TypeN-Channel

Technical details

N-Channel 80V 59.6A 65.7W Surface Mount PowerPAKSO-8

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