VISHAY · FETs & Power MOSFETs · MPN SIR108DP-T1-RE3
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 20.9nC@10V |
| Current - Continuous Drain(Id) | 45A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 5W |
| RDS(on) | 13.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.06nF |
100V 45A 2V 5W 13.5mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS