VISHAY SIR106ADP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR106ADP-T1-RE3

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)255pF
Current - Continuous Drain(Id)65.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)9mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)2.44nF
TypeN-Channel

Technical details

N-Channel 100V 65.8A 5W Surface Mount PowerPAKSO-8

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