VISHAY · FETs & Power MOSFETs · MPN SIJK5100E-T1-GE3
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| Output Capacitance(Coss) | 3.21nF |
|---|---|
| Pd - Power Dissipation | 536W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 131nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| RDS(on) | 1.1mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.48nF |
536W 100V 2V 1.1mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs RoHS