VISHAY SIJK140E-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIJK140E-T1-GE3

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Specifications

Gate Charge(Qg)470nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)795A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation536W
RDS(on)0.47mΩ@10V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 40V 795A 536W PowerPAK10x12-8

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