VISHAY · FETs & Power MOSFETs · MPN SIJH800E-T1-GE3
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 210nC@10V |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 333W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 1.55mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.23nF |
| Type | N-Channel |
80V 29A 4V 333W 1.55mΩ@10V 1 N-channel N-Channel PowerPAK(8x8) Single FETs, MOSFETs RoHS