VISHAY SIJH600E-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIJH600E-T1-GE3

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)212nC@10V
Current - Continuous Drain(Id)373A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.3W
Reverse Transfer Capacitance (Crss@Vds)78pF
RDS(on)1.15mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)9.95nF
TypeN-Channel

Technical details

N-Channel 60V 373A 3.3W PowerPAK-5(8x8)

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