VISHAY · FETs & Power MOSFETs · MPN SIJH5800E-T1-GE3
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| Gate Charge(Qg) | 155nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 30A;302A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.3W;333W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.35mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.73nF |
80V 4V 1.35mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS