VISHAY · FETs & Power MOSFETs · MPN SIJH5700E-T1-GE3
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | 140nC@10V |
| Current - Continuous Drain(Id) | 17A;174A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.3W;333W |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 4.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.5nF |
150V 4V 4.1mΩ@10V 1 N-channel PowerPAK8x8L Single FETs, MOSFETs RoHS