VISHAY · FETs & Power MOSFETs · MPN SIJH440E-T1-GE3
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| Gate Charge(Qg) | 195nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 820pF |
| RDS(on) | 0.96mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 20.33nF |
40V 200A 2.3V 0.96mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS