VISHAY · FETs & Power MOSFETs · MPN SIJH112E-T1-GE3
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| Gate Charge(Qg) | 160nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 225A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 333W |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF |
| RDS(on) | 3.6mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.05nF |
| Type | N-Channel |
N-Channel 100V 225A 333W PowerPAK-5(8x8)