VISHAY SIJA54ADP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIJA54ADP-T1-GE3

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)21.5nC@4.5V
Current - Continuous Drain(Id)126A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation5.2W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)2.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.85nF

Technical details

40V 126A 2.5V 5.2W 2.3mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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