VISHAY · FETs & Power MOSFETs · MPN SIJA22DP-T1-GE3
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| Gate Charge(Qg) | 125nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 201A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 48W |
| Reverse Transfer Capacitance (Crss@Vds) | 202pF |
| RDS(on) | 1.4mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.5nF |
| Type | N-Channel |
25V 201A 2.2V 48W 1.4mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS