VISHAY · FETs & Power MOSFETs · MPN SIJ494DP-T1-GE3
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| Gate Charge(Qg) | 16.1nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 250pF |
| Current - Continuous Drain(Id) | 9.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 23.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.07nF |
| Type | N-Channel |
N-Channel 150V 9.8A 5W Surface Mount PowerPAKSO-8