VISHAY · FETs & Power MOSFETs · MPN SIJ478DP-T1-GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 17.1nC@10V |
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 950pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 62.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF |
| RDS(on) | 11.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.855nF |
80V 60A 2.6V 62.5W 11.5mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS