VISHAY · FETs & Power MOSFETs · MPN SIJ470DP-T1-GE3
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 28.5nC@10V |
| Current - Continuous Drain(Id) | 17.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 5W |
| RDS(on) | 9.1mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.05nF |
100V 17.4A 3.5V 5W 9.1mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS