VISHAY · FETs & Power MOSFETs · MPN SIJ450DP-T1-GE3
No reviews yet — be the first to review VISHAY SIJ450DP-T1-GE3.
| Gate Charge(Qg) | 114nC@10V |
|---|---|
| Drain to Source Voltage | 45V |
| Current - Continuous Drain(Id) | 113A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 80W |
| Reverse Transfer Capacitance (Crss@Vds) | 53pF |
| RDS(on) | 2.65mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.92nF |
| Type | N-Channel |
45V 113A 2.3V 80W 2.65mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS