VISHAY · FETs & Power MOSFETs · MPN SIJ438ADP-T1-GE3
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| Gate Charge(Qg) | 49nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 169A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 1.35mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.8nF |
40V 169A 1.1V 5W 1.35mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS