VISHAY · FETs & Power MOSFETs · MPN SIJ4108DP-T1-GE3
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| Gate Charge(Qg) | 40nC@7.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 255pF |
| Current - Continuous Drain(Id) | 56.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 69.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 16.2pF |
| RDS(on) | 10.6mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.44nF |
| Type | N-Channel |
N-Channel 100V 56.7A 69.4W PowerPAKSO-8L