VISHAY · FETs & Power MOSFETs · MPN SIJ4106DP-T1-GE3
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 64nC@10V |
| Current - Continuous Drain(Id) | 59A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 69.4W |
| RDS(on) | 9.1mΩ@7.5V |
| Type | N-Channel |
100V 59A 3.8V 69.4W 9.1mΩ@7.5V N-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS