VISHAY · FETs & Power MOSFETs · MPN SIJ188DP-T1-GE3
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| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 92.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | 65.7W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 4.9mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.92nF |
| Type | N-Channel |
N-Channel 60V 92.4A 65.7W PowerPAKSO-8L