VISHAY · FETs & Power MOSFETs · MPN SIJ186DP-T1-GE3
No reviews yet — be the first to review VISHAY SIJ186DP-T1-GE3.
| Gate Charge(Qg) | 15.5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 23A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.6V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| RDS(on) | 4.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.71nF |
N-Channel 60V 23A PowerPAKSO-8L