VISHAY · FETs & Power MOSFETs · MPN SIJ150DP-T1-GE3
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| Drain to Source Voltage | 45V |
|---|---|
| Gate Charge(Qg) | 21.4nC@10V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF |
| RDS(on) | 2.83mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4nF |
45V 110A 2.3V 2.83mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS