VISHAY · FETs & Power MOSFETs · MPN SIJ128LDP-T1-GE3
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 14.5nC@10V |
| Current - Continuous Drain(Id) | 25.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 11.25W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 20.3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 127pF |
| Type | N-Channel |
80V 25.5A 2.5V 11.25W 20.3mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS