VISHAY · FETs & Power MOSFETs · MPN SIHU3N50DA-GE3
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| Gate Charge(Qg) | 12nC@10V |
|---|---|
| Drain to Source Voltage | - |
| Current - Continuous Drain(Id) | 1.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 69W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 3.2Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
1.9A 4.5V 69W 3.2Ω@10V 1 N-channel TO-251-3 Single FETs, MOSFETs RoHS